Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate
2011-01-04
2011-01-04
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Group iii-v compound
C257S616000
Reexamination Certificate
active
07863710
ABSTRACT:
Dislocation removal from a group III-V film grown on a semiconductor substrate is generally described. In one example, an apparatus includes a semiconductor substrate, a buffer film including a group III-V semiconductor material epitaxially coupled to the semiconductor substrate wherein the buffer film includes material melted by laser pulse irradiation and recrystallized to substantially remove dislocations or defects from the buffer film, and a first semiconductor film epitaxially grown on the buffer film wherein a lattice mismatch exists between the semiconductor substrate and the first semiconductor film.
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Hudait Mantu K.
Kavalieros Jack T.
Radosavljevic Marko
Tolchinsky Peter G.
Cool Patent P.C.
Curtin Joseph P.
Intel Corporation
Montalvo Eva Yan
Pizarro Marcos D.
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