Chalcogenide-based electrokinetic memory element and method...

Details Chalcogenide-based electrokinetic memory element and method... Chalcogenide-based electrokinetic memory element and method...

2007-12-04

2007-12-04

Rose, Kiesha L. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

C257S441000, C438S040000, C438S282000

Reexamination Certificate

active

11201338

ABSTRACT:
Memory elements including a first electrode and a second electrode. A chalcogenide material layer is between the first and second electrodes and a tin-chalcogenide layer is between the chalcogenide material layer and the second electrode. A selenide layer is between the tin-chalcogenide layer and the chalcogenide material layer. Optionally, a metal layer, for example a silver layer, is between the tin-chalcogenide layer and the second electrode. Methods for forming the memory elements are also provided.

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