Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or...
Reexamination Certificate
2007-05-29
2007-05-29
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
C257S022000, C257S190000, C257S201000
Reexamination Certificate
active
10856175
ABSTRACT:
For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-Å family heterostructure devices.
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Coombs, III Arthur W.
Sherohman John W.
Wu Kuang Jen J.
Yee Jick Hong
Lee John H.
Nadav Ori
Staggs Michael C.
The Regents of the University of California
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