Directionally controlled growth of nanowhiskers

Details Directionally controlled growth of nanowhiskers Directionally controlled growth of nanowhiskers

2011-03-22

2011-03-22

Kebede, Brook (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Group iii-v compound

C257SE21126, C257SE21131, C977S825000

Reexamination Certificate

active

07911035

ABSTRACT:
Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.

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