Anodically bonded ultra-high-vacuum cell

Details Anodically bonded ultra-high-vacuum cell Anodically bonded ultra-high-vacuum cell

2006-05-15

2008-12-30

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

C257S622000, C257S773000, C257S774000, C257SE23004, C257SE23009

Reexamination Certificate

active

07470971

ABSTRACT:
The present invention discloses an anodically bonded vacuum cell structure with a glass substrate including a cavity, and a substrate deposited on the glass substrate, thereby enclosing the cavity to form a bonding interface. The bonding interface having silicon such that the substrate includes a layer of silicon or a secondary substrate with silicon layer bonded onto the secondary substrate.

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