Compound semiconductor device including AIN layer of...

Details Compound semiconductor device including AIN layer of... Compound semiconductor device including AIN layer of...

2008-03-31

2011-10-25

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Group iii-v compound

C257S618000, C257SE29108

Reexamination Certificate

active

08044492

ABSTRACT:
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

REFERENCES:
patent: 2006/0043396 (2006-03-01), Tsuda et al.
patent: 2006/0220039 (2006-10-01), Yokoyama et al.
patent: 2008/0197359 (2008-08-01), Imanishi et al.
patent: 2003-309071 (2003-10-01), None
patent: 2005-032823 (2005-02-01), None
patent: 2005-183524 (2005-07-01), None
patent: 2006-165207 (2006-06-01), None
patent: 2005/036658 (2005-04-01), None
Chinese Office Action dated Jun. 19, 2009, issued in corresponding Chinese Patent Application No. 200810090314.

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