Bulk nitride mono-crystal including substrate for epitaxy

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S001000, C257S009000, C257S010000, C257S011000, C257S189000, C257S200000, C257S222000, C257S289000, C257S627000, C257S628000, C257SE33023, C257S068000

Reexamination Certificate

active

07420261

ABSTRACT:
The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1,0 μm thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1,0-μm thick and its surface dislocation density is less than 106/cm2. Mono-crystals according to the present invention are suitable for epitaxial growth of nitride semiconductor layers. Due to their good crystalline quality they are suitable for use in opto-electronics for manufacturing opto-electronic semiconductor devices based on nitrides, in particular for manufacturing semiconductor laser diodes and laser devices. The a.m. bulk mono-crystals of gallium-containing nitride are crystallized on seed crystals. Various seed crystals may be used. The bulk mono-crystals of gallium-containing nitride are crystallized by a method involving dissolution of a gallium-containing feedstock in a supercritical solvent and crystallization of a gallium nitride on a surface of seed crystal, at temperature higher and/or pressure lower than in the dissolution process.

REFERENCES:
patent: 5456204 (1995-10-01), Dimitrov et al.
patent: 5679965 (1997-10-01), Schetzina
patent: 5780876 (1998-07-01), Hata
patent: 5868837 (1999-02-01), DiSalvo et al.
patent: 5928421 (1999-07-01), Yuri et al.
patent: 6031858 (2000-02-01), Hatakoshi et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6051145 (2000-04-01), Griffith et al.
patent: 6067310 (2000-05-01), Hashimoto et al.
patent: 6139628 (2000-10-01), Yuri et al.
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6177057 (2001-01-01), Purdy
patent: 6249534 (2001-06-01), Itoh et al.
patent: 6252261 (2001-06-01), Usui et al.
patent: 6265322 (2001-07-01), Anselm et al.
patent: 6270569 (2001-08-01), Shibata et al.
patent: 6303403 (2001-10-01), Sato et al.
patent: 6329215 (2001-12-01), Porowski et al.
patent: 6372041 (2002-04-01), Cho et al.
patent: 6399500 (2002-06-01), Porowski et al.
patent: 6399966 (2002-06-01), Tsuda et al.
patent: 6423984 (2002-07-01), Kato et al.
patent: 6434053 (2002-08-01), Fujiwara
patent: 6447604 (2002-09-01), Flynn et al.
patent: 6459712 (2002-10-01), Tanaka et al.
patent: 6468882 (2002-10-01), Motoki et al.
patent: 6488767 (2002-12-01), Xu et al.
patent: 6509651 (2003-01-01), Matsubara et al.
patent: 6531072 (2003-03-01), Suda et al.
patent: 6534795 (2003-03-01), Hori et al.
patent: 6586762 (2003-07-01), Kozaki
patent: 6593589 (2003-07-01), Osinski et al.
patent: 6614824 (2003-09-01), Tsuda et al.
patent: 6627552 (2003-09-01), Nishio et al.
patent: 6677619 (2004-01-01), Nagahama et al.
patent: 6686608 (2004-02-01), Takahira
patent: 6711191 (2004-03-01), Kozaki et al.
patent: 6720586 (2004-04-01), Kidoguchi et al.
patent: 6858882 (2005-02-01), Tsuda et al.
patent: 6924512 (2005-08-01), Tsuda et al.
patent: 7057211 (2006-06-01), Dwilinski et al.
patent: 7081162 (2006-07-01), Dwilinski et al.
patent: 7097707 (2006-08-01), Xu
patent: 7160388 (2007-01-01), Dwiliński et al.
patent: 7291544 (2007-11-01), D'Evelyn et al.
patent: 2001/0008656 (2001-07-01), Tischler et al.
patent: 2001/0022154 (2001-09-01), Cho et al.
patent: 2001/0030328 (2001-10-01), Ishida
patent: 2002/0014631 (2002-02-01), Iwata et al.
patent: 2002/0031153 (2002-03-01), Niwa et al.
patent: 2002/0047113 (2002-04-01), Ohno et al.
patent: 2002/0063258 (2002-05-01), Motoki
patent: 2002/0078881 (2002-06-01), Cuomo et al.
patent: 2002/0189531 (2002-12-01), Dwilinski et al.
patent: 2003/0143771 (2003-07-01), Kidoguchi et al.
patent: 2003/0209191 (2003-11-01), Purdy
patent: 2004/0031978 (2004-02-01), D'Evelyn et al.
patent: 2004/0139912 (2004-07-01), Dwilinski et al.
patent: 2004/0244680 (2004-12-01), Dwilinski et al.
patent: 2004/0255840 (2004-12-01), Dwilinski et al.
patent: 2006/0032428 (2006-02-01), Dwilinski et al.
patent: 2006/0037530 (2006-02-01), Dwilinski et al.
patent: 1036414 (1989-10-01), None
patent: 0 716 457 (1996-06-01), None
patent: 0 711 853 (1999-09-01), None
patent: 0 949 731 (1999-10-01), None
patent: 0 973 207 (2000-01-01), None
patent: 1 088 914 (2001-04-01), None
patent: 2 796 657 (2001-01-01), None
patent: 2 326 160 (1998-12-01), None
patent: 2 333 521 (1999-07-01), None
patent: 2-137287 (1990-05-01), None
patent: 7-22692 (1995-03-01), None
patent: 7-165498 (1995-06-01), None
patent: 7-249830 (1995-09-01), None
patent: 8-250802 (1996-09-01), None
patent: 9-134878 (1997-05-01), None
patent: 9-293897 (1997-11-01), None
patent: 10-7496 (1998-01-01), None
patent: 10-70079 (1998-03-01), None
patent: 10-70338 (1998-03-01), None
patent: 10-84161 (1998-03-01), None
patent: 11-54847 (1999-02-01), None
patent: 11-307813 (1999-11-01), None
patent: 2000-82863 (2000-03-01), None
patent: 2000-82867 (2000-03-01), None
patent: 2000-216494 (2000-08-01), None
patent: 2001-85737 (2001-03-01), None
patent: 2001-342100 (2001-12-01), None
patent: 2003-40699 (2003-02-01), None
patent: 2004-168656 (2004-06-01), None
patent: WO 98/55671 (1998-12-01), None
patent: WO 01/24284 (2001-04-01), None
patent: WO 01/24921 (2001-04-01), None
patent: WO 02/101120 (2002-12-01), None
Porowski, S., “High Pressure Growth of GaN—New Prospects for Blue Lasers”, Journal of Crystal Growth, 1996, pp. 583-589, vol. 166, Elsevier Science B.V.
Chu, T. L. et al., “Crystal Growth and Characterization of Gallium Nitride”, J. Electrochem. Soc., Solid-State Science and Technology, Jan. 1974, pp. 159-162, vol. 121, No. 1.
Sakagami, N. et al., “Growth Kinetics and Morphology of ZnO Single Crystal Grown under Hydrothermal Conditions”, Journal of Ceramic Association, 1974, pp. 405-413, vol. 82, No. 8.
Hirano, S. et al., “Hydrothermal Synthesis of Gallium Orothphosphate Crystals”, Bull. Chem. Soc. Japan., 1989, pp. 275-278, vol. 62, The Chemical Society of Japan.
Akasaki, I. et al., “Growth and Properties of Single Crystalline GaN Films by Hydride Vapor Phase Epitaxy”, Crystal Properties and Preparation, 1991, pp. 154-157, vol. 32-34, Trans Tech Publications, Switzerland.
Hirano, S. et al., “Growth of Gallium Orthophosphate Single Crystals in Acidic Hydrothermal Solutions”, Journal of Materials Science, 1991, pp. 2805-2808, vol. 26, Chapman and Hall Ltd.
Laudise, R. A., “What is Materials Chemistry?” Materials for Nonlinear Optics, 1991, pp. 410-433, American Chemical Society.
Porowski, S. et al., “Prospects for High-Pressure Crystal Growth of III-V Nitrides”, Inst. Phys. Conf. Ser., 1993, pp. 369-372, No. 137, Chapter 4, Silicon Carbide and Related Materials.
Pakula, K., et al., “Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals”, Acta Physica Polonica A, 1995, pp. 861-864, vol. 88, No. 5.
Dwiliński, R. et al., “On GaN Crystallization by Ammonothermal Method”, ACTA Physica Polonica A, 1996, pp. 763-766, vol. 90, No. 4.
Yanagisawa, K. et al., “Hydrothermal Single Crystal Growth of Calcite in Ammonium Acetate Solution”, Journal of Crystal Growth, 1996, pp. 285-294, vol. 163, Elsevier Science B.V.
Kelly, M. et al., “Optical Patterning of GaN Films”, Applied Physics Letters, Sep. 1996, pp. 1749-1751, vol. 69, No. 12, American Institute of Physics.
Kuramata, A. et al., “Substrate for III-V Group Nitride Semiconductors”, Oyo But

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Bulk nitride mono-crystal including substrate for epitaxy does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bulk nitride mono-crystal including substrate for epitaxy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bulk nitride mono-crystal including substrate for epitaxy will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3970069

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.