Buffer structure for modifying a silicon substrate

Details Buffer structure for modifying a silicon substrate Buffer structure for modifying a silicon substrate

2008-01-29

2008-01-29

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Reexamination Certificate

active

07323764

ABSTRACT:
A buffer structure comprising a compositionally graded layer of a nitride alloy comprising two or more Group IIIB elements, for example La, Y, Sc or Ac, is used to modify a silicon substrate to produce a universal substrate on which a range of target materials, for example GaN, may be deposited to produce semiconductor devices for electronic and optical applications. The resulting lattice parameter L varies with thickness T through the structure.

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