High yield sub-micron gate FETs
High-breakdown voltage heterostructure field-effect...
High-electron mobility transistor with zinc oxide
High-speed compound semiconductor device having a minimized para
High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt
Hybrid strained orientated substrates and devices
Hybrid strained orientated substrates and devices
III-nitride bidirectional switches
III-nitride heterojunction semiconductor device and method...
III-nitride power semiconductor device
III-nitride power semiconductor device
III-nitride power semiconductor device having a programmable...
III-nitride power semiconductor device with a current sense...
III-nitride semiconductor device with trench structure
III-V group compound semiconductor device including a buffer...
In-situ nitride/oxynitride processing with reduced...
In0.34A10.66AsSb0.15/InP HFET utilizing InP channels
InAlAs/InGaAs heterojunction field effect type semiconductor dev
InAlGaP devices
Indium gallium nitride channel high electron mobility...