Hybrid strained orientated substrates and devices

Details Hybrid strained orientated substrates and devices Hybrid strained orientated substrates and devices

2011-03-01

2011-03-01

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C438S198000, C438S199000

Reexamination Certificate

active

07898003

ABSTRACT:
A semiconductor structure. The structure includes (a) substrate, (b) a first semiconductor region on top of the substrate, wherein the first semiconductor region comprises a first semiconductor material and a second semiconductor material, which is different from the first semiconductor material, and wherein the first semiconductor region has a first crystallographic orientation, and (c) a third semiconductor region on top of the substrate which comprises the first and second semiconductor materials and has a second crystallographic orientation. The structure further includes a second semiconductor region and a fourth semiconductor region on top of the first and the third semiconductor regions respectively. Both second and fourth semiconductor regions comprise the first and second semiconductor materials. The second semiconductor region has the first crystallographic orientation, whereas the fourth semiconductor region has the second crystallographic orientation.

REFERENCES:
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patent: 6815278 (2004-11-01), Ieong et al.
patent: 7436006 (2008-10-01), Cheng et al.
patent: 2004/0256700 (2004-12-01), Doris et al.
patent: 2004/0266076 (2004-12-01), Doris et al.
patent: 2005/0093021 (2005-05-01), Ouyang et al.
Notice of Allowance (Mail Date Jun. 3, 2008) for U.S. Appl. No. 11/419,308, filed May 19, 2006; First Named Inventor Kangguo Cheng; Customer No. 30449.

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