III-nitride power semiconductor device with a current sense...

Details III-nitride power semiconductor device with a current sense... III-nitride power semiconductor device with a current sense...

2007-10-30

2007-10-30

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257S287000, C257S343000

Reexamination Certificate

active

11240017

ABSTRACT:
A III-nitride power semiconductor device that includes a current sense electrode.

REFERENCES:
patent: 2005/0151255 (2005-07-01), Ando et al.
patent: 2006/0081985 (2006-04-01), Beach et al.
patent: 2-40964 (1990-02-01), None
patent: 2003-229439 (2003-08-01), None
Office Action dated Jan. 4, 2007 from the Japanese Patent Office for the corresponding Japanese Application No. 2005-290361 (translated).

Affiliated with

Also associated with

Rating

III-nitride power semiconductor device with a current sense... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with III-nitride power semiconductor device with a current sense..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-nitride power semiconductor device with a current sense... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3858223