Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1997-06-03
1998-12-01
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257201, H01L 29778, H01L 29812
Patent
active
058442618
ABSTRACT:
In a DH-PHEMT the channel layer comprises InGaAs and the donor layers comprise In.sub.0.5-q (Al.sub.x Ga.sub.1-x).sub.0.5+q P in which the mole fraction of Al is in the range of about 0.2.ltoreq.x.ltoreq.0.3. In another embodiment, an InAlGaP layer forms a Schottky barrier gate contact with a barrier height of about 1.0 eV and hence low leakage current. The devices exhibit high 2DEG density, current drivability, and breakdown voltage, making them suitable for low voltage application such as battery-powered, portable wireless equipment. The Schottky barrier contact may be used in devices other than HEMTs.
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Kuo Jenn-Ming
Wang Yu-Chi
Guay John
Lucent Technologies - Inc.
Pacher E. E.
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