In0.34A10.66AsSb0.15/InP HFET utilizing InP channels

Details In0.34A10.66AsSb0.15/InP HFET utilizing InP channels In0.34A10.66AsSb0.15/InP HFET utilizing InP channels

2001-05-22

2002-08-06

Ho, Hoai V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S021000, C257S190000, C257S194000

Reexamination Certificate

active

06429468

ABSTRACT:

FIELD OF THE INVENTION
This invention, for the first time, tries to develop coupled &dgr;-InP channel In
0.34
Al
0.66
As
0.85
Sb
0.15
/InP heterostructure field-effect transistor (HFET) on InP substrate through metalorganic chemical vapor deposition (MOCVD).
BACKGROUND OF THE INVENTION
As the transmittal property of InGaAs is better than that of GaAs, it is proved that the performance of InAlAs/InGaAS High Electron Mobility Transistor (HEMT) is superior to that of AlGaAs/GaAs HEMT in terms of high frequency and low noise. However, the higher output conduction and lower avalanche voltage restrict the application of InAlAs/InGaAS HEET in power amplifiers. The two main factors for this are: (1) the energy gap(Eg) of In
0.53
Ga
0.47
As is only 0.73eV, only half of GaAS′ energy gap of 1.42eV; and (2) The schottky potential energy barrier of In
0.52
Al
0.48
As is 0.66ev, lower than that of AlGaAs (leV).
Up to now, there are many documents published concerning methods of improving the avalanche voltage of High Electron Mobility Transistor (HEMT), but all of them have limited effect. The experimental result of In
0.34
Al
0.66
As
0.85
Sb
0.15
/In
0.75
Ga
0.25
As/InP HFET published by inventor (IEEE Electron Device Lett. Vol. EDL-19, pp.195-197, 1998) proves that, comparing with FETs with similar gate length in other documents published, the new design can significantly improve the avalanche voltage on two or three terminals of it. But, using InGaAs as channel layer has inherent defect, i.e. at higher suction-source voltage, there is still the problem of high conduction. In addition, X. Zheng et al.(Appl. Phys. Lett. Vol.62, pp.504-506, and Vol.62, pp.3455-3457, 1993) has proved that, when double &dgr; doping structure has suitable space layer, the electrovalence rate in it will significantly increase due to coupling effect. But so for, relevant studies still concentrates on GaAs-based components.
SUMMARY OF THE INVENTION
The main purpose of this invention is to state a coupled &dgr;-InP channel In
0.34
Al
0.66
As
0.85
Sb
0.15
/InP heterostructure field-effect transistor (HFET). Whether gd, is significantly smaller than that of our previously reported InAlAsSb/InGaAs/InP HFET. These characteristics are attributed to the use of the coupled &dgr;-doped structure, InP channel, In
0.34
Al
0.66
As
0.85
Sb
0.15
Schottky layer' and to the large conduction-band discontinuity(&Dgr;Ec) at the InAlAsSb/InP heterojunction.
Another purpose of this invention is to claim a methods for to manufacture the coupled &dgr;-InP channel In
0.34
Al
0.66
As
0.85
Sb
0.15
/InP heterostructure field-effect transistor (HFET).
The invention will now be described by way of example with reference to the accompanying Tables and Figures in which: certain illustrative embodiments thereof have been shown by way of example in the drawing and will herein be described in detail.


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patent: 6287946 (2001-09-01), Micovic et al.
Pobanz C. et al., “High Performance MMICs with Submillimeter Wave InP-based HEMTs”, Indium Phosphide and Related Materials, 2000, pp. 67-70. IEEE Catalog No.: 00CH37107, May 2000.*
Su J. S. et al., “High-breakdown characteristics of the InP-based heterostructure field-effect transistor with In/sub 0.34/Al/sub 0.66/As/sub 0.85/Sb/sub 0.15/Schottky layer ”, IEEE Electron Device Letters, vol. 19, No. 6, Jun. 1998.*
Hsu W. C. “On the improvement of gate voltage swings in delta -doped GaAs/In/sub x/Ga/sub 1-x/As/GaAs pseudomorphic heterostructures”, IEEE Transactions on Electron Devices, vol. 40, No. 9, Sep. 1993.*
Aleksey D. Andreev et al., “Theoretical Study of Thresholdless Auger Recombination In Comressively Strained InA1AsSb/GaSb Quantum Wells”,Appl. Phys. lett., 70(5), Feb. 3, 1997.
Sandeep R. Bahl et al., “Breakdown Voltage Enhancement from Channel Quantization in InA1As
+-InGaAs HFET's”,IEEE Electron Device Letters, vol. 13, No. 2, Feb. 1992; and.
J. B. Shealy et al., “High-Breakdown-Voltage A1InAs/GaInAs Junction-Modulated HEMT's (JHEMT's) with Regrown Ohmic Contacts by MOCVD”,IEEE Electron Device Letters, vol. 14, No. 2, Dec. 1993.

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