High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt

Details High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt

1995-06-06

1996-08-20

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 14, 257 23, 257 29, 257195, H01L 310328, H01L 2906

Patent

active

055481400

ABSTRACT:
An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP.sub.0.39+y Sb.sub.0.61-y.

REFERENCES:
patent: 5170230 (1992-12-01), Takikawa
patent: 5407491 (1995-04-01), Freundlich et al.
patent: 5430310 (1995-07-01), Shibasaki et al.
patent: 5446293 (1995-08-01), Chu et al.
patent: 5446296 (1995-08-01), Nakajima
patent: 5449928 (1995-09-01), Matsugatani et al.
C. G. Van de Walle, "Band Lineups and Deformation Potentials in the Model-Solid Theory", Phys. Rev. B., vol. 39, pp. 1871-1881, Jan. 1989.

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