Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-03-19
2008-08-05
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S192000, C257SE29248, C257SE29246
Reexamination Certificate
active
07408208
ABSTRACT:
A III-nitride power semiconductor device that includes a two dimensional electron gas having a low field region under the gate thereof.
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Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse—Di Song, Jie Liu, Zhiqun Cheng, Wilson C.W. Tang, Kei May Lau, Fellow, IEEE and Kevin J. Chen, Senior Member, IEEE IEEE Electron Device Letters, vol. 28, No. 3, Mar. 2007-pp. 189-191.
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PCT International Search Report dated Feb. 7, 2008 issued in PCT Application No. PCT/US07/06930.
Ho Tu-Tu V
International Rectifier Corporation
Ostrolenk Faber Gerb & Soffen, LLP
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