InAlAs/InGaAs heterojunction field effect type semiconductor dev

Details InAlAs/InGaAs heterojunction field effect type semiconductor dev InAlAs/InGaAs heterojunction field effect type semiconductor dev

1996-12-16

1999-05-25

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 310328, H01L 310336

Patent

active

059071648

ABSTRACT:
In an InAlAs/InGaAs heterojunction field type semiconductor device including an InP substrate, a superlattice layer formed by periods of InAs/AlAs or InAs/AlGaAs is formed over an InGaAs channel layer which is formed over the InP substrate.

REFERENCES:
patent: 5206528 (1993-04-01), Nashimoto
patent: 5268582 (1993-12-01), Kopf et al.
patent: 5420442 (1995-05-01), Hasenberg et al.
Fujihara et al; Thermally stable InAlAs/InGaAs heterojunction FET with AlAs/InAs superlattice insertion layer, May 23, 1996.
"Photoreflectance Characterization of an InAlAs/InGaAs Heterostructure Bipolar Transistor" Chen, Y.H. Proceedings of Taipei Technical College, vol. 27, No. 2, p. 1; Jul. 1994.
"Photoreflectance Characterization of InAlAs/InGaAs Hetero Junction Bipolar Transistor with a 300.ANG. Spacer" Chen, Y.H. Proceedings of Taipei Technical School, vol. 27, No. 1, p. 33, Mar. 1995.
Fujihara et al; "Thermally stable InAlAs/InGaAs heterojunction FET with AlAs/InAs superlattice insertion layer"; pp. 1039-1041; Electronic Letters, vol. 32, No. 11, May 23, 1996.
N. Hayafuji et al., "Thermal Stability of AlInAs/GaInAs/InP heterostructures", Appl Phys. Lett. 66(7), pp. 863-865, Feb. 1995.
A. Fujihara et al., "Thermal Stability of InAlAs/InGaAs HJFETs with an In (Al.sub.1-x Ga.sub.x)As Layer", Technical Report of IEICE, pp. 13-20, Oct. 1995.

Affiliated with

Also associated with

Rating

InAlAs/InGaAs heterojunction field effect type semiconductor dev does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with InAlAs/InGaAs heterojunction field effect type semiconductor dev, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and InAlAs/InGaAs heterojunction field effect type semiconductor dev will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-402558