Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-03-07
2006-03-07
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S382000, C257S442000, C257S616000, C257S649000, C257S900000
Reexamination Certificate
active
07009226
ABSTRACT:
Carrier mobility in transistor channel regions is increased by depositing a conformal stressed liner. Embodiments include forming a silicon oxynitride layer on the stressed liner to reduce or eliminate deposition surface pattern sensitivity during gap filling, and in-situ SACVD of silicon oxide gap fill directly on the stressed liner with reduced pattern sensitivity. Embodiments also include the use of Si—Ge substrates.
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Advanced Micro Devices , Inc.
Munson Gene M.
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