III-nitride semiconductor device with trench structure

Details III-nitride semiconductor device with trench structure III-nitride semiconductor device with trench structure

2004-12-03

2008-10-21

Landau, Matthew C (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257SE29246, C257SE29252

Reexamination Certificate

active

07439555

ABSTRACT:
A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being capable of withstanding higher electric field or manipulating the charge in the conduction channel. A passivation of the III-nitride material decouples the dielectric from the device to permit lower dielectric constant materials to be used in high power applications.

REFERENCES:
patent: 4024560 (1977-05-01), Miller et al.
patent: 4152711 (1979-05-01), Nakata
patent: 4839310 (1989-06-01), Hollis et al.
patent: 5753938 (1998-05-01), Thapar et al.
patent: 6486511 (2002-11-01), Nathanson et al.
patent: 6580141 (2003-06-01), Hshieh et al.
patent: 6864131 (2005-03-01), Thornton
patent: 2002/0182791 (2002-12-01), Yoshida
O. Ambacher et al.,Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, Journal of Applied Phys., vol. 85, No. 6, Mar. 15, 1999 (pp. 3222-3233).

Affiliated with

Also associated with

Rating

III-nitride semiconductor device with trench structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with III-nitride semiconductor device with trench structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-nitride semiconductor device with trench structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4008645