III-V group compound semiconductor device including a buffer...

Details III-V group compound semiconductor device including a buffer... III-V group compound semiconductor device including a buffer...

2011-03-08

2011-03-08

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S183000, C257S194000, C257S615000, C257SE29246, C257SE21371, C257SE21387, C257SE21403, C257SE21407

Reexamination Certificate

active

07902571

ABSTRACT:
A field effect transistor (FET) with high withstand voltage and high performance is realized by designing a buffer layer structure appropriately to reduce a leakage current to 1×10−9A or less when a low voltage is applied. An epitaxial wafer for a field effect transistor comprising a buffer layer2, an active layer, and a contact layer on a semi-insulating substrate1from the bottom, and the buffer layer2includes a plurality of layers, and a p-type buffer layer composed of p-type AlxGa1-xAs (0.3≦x≦1) is provided as a bottom layer (undermost layer)2a. A Nd product of a film thickness of the p-type buffer layer and a p-type carrier concentration of the p-type buffer layer is within a range from 1×1010to 1×1012/cm2.

REFERENCES:
patent: 4236166 (1980-11-01), Cho et al.
patent: 4862228 (1989-08-01), Ralph
patent: 5038187 (1991-08-01), Zhou
patent: 5196717 (1993-03-01), Hiroki et al.
patent: 5369288 (1994-11-01), Usuki
patent: 5610410 (1997-03-01), Imanishi
patent: 6325849 (2001-12-01), Hideo et al.
patent: 6355951 (2002-03-01), Hattori
patent: 6429103 (2002-08-01), Johnson et al.
patent: 7012286 (2006-03-01), Inai et al.
patent: 2002/0069907 (2002-06-01), Yamashita
patent: 2002/0088994 (2002-07-01), Yamaki et al.
patent: 2004/0266090 (2004-12-01), Nakamura
patent: 10-116837 (1998-05-01), None
Ohno et al., “Suppression of GDS frequency dispersion in heterojunction FETs with a partially depleted p-type buffer layer”, Solid-State Electronics 43 (1999) pp. 1339-1345.

Affiliated with

Also associated with

Rating

III-V group compound semiconductor device including a buffer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with III-V group compound semiconductor device including a buffer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-V group compound semiconductor device including a buffer... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2720420