III-nitride bidirectional switches

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Reexamination Certificate

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C257SE29001

Reexamination Certificate

active

07875907

ABSTRACT:
Bidirectional switches are described. The bidirectional switches include first and a second III-N based high electron mobility transistor. In some embodiments, the source of the first transistor is in electrical contact with a source of the second transistor. In some embodiments, the drain of the first transistor is in electrical contact with a drain of the second transistor. In some embodiments, the two transistors share a drift region and the switch is free of a drain contact between the two transistors. Matrix converters can be formed from the bidirectional switches.

REFERENCES:
patent: 2005/0189561 (2005-09-01), Kinzer et al.
patent: 2005/0189562 (2005-09-01), Kinzer et al.
patent: 2006/0043499 (2006-03-01), De Cremoux et al.
patent: 2006/0060871 (2006-03-01), Beach
patent: 2006-033723 (2006-02-01), None
patent: 2007-036218 (2007-02-01), None
International Search Report and Written Opinion of the International Searching Authority, International Application Serial No. PCT/US2008/076160, Mar. 18, 2009, 11 pp.
Mishra et al., “Enhancement Mode III-N HEMTs”, U.S. Appl. No. 12/108,449, filed Apr. 23, 2008, 58 pp.
Suh al., “Enhancement Mode Gallium Nitride Power Devices”, U.S. Appl. No. 11/856,687, filed Sep. 17, 2007, 58 pp.

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