Field effect transistor and method of fabricating the same

Field effect transistor and method of fabrication

Field effect transistor and method of manufacturing the same

Field effect transistor and method of manufacturing the same

Field effect transistor having a GaInAs/GaAs quantum well struct

Field effect transistor having a graded bandgap InGaAsP channel

Field effect transistor having a multi-layer channel

Field effect transistor having a sandwiched channel layer

Field effect transistor having a spacer layer with different mat

Field effect transistor having an improved transistor characteri

Field effect transistor having Ohmic electrode in a recess

Field effect transistor including a group III-V compound...

Field effect transistor incorporating at least one structure...

Field effect transistor semiconductor device

Field effect transistor with a quantum-wave interference layer

Field effect transistor with an improved Schottky gate structure

Field effect transistor with electrode portions under T-shaped g

Field effect transistor with first and second drain electrodes

Field effect transistor with independently biased gates

Field effect transistor with lightly doped drain regions