Field effect transistor with an improved Schottky gate structure

Details Field effect transistor with an improved Schottky gate structure Field effect transistor with an improved Schottky gate structure

1994-06-01

1997-06-03

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 310328, H01L 310336

Patent

active

056357354

ABSTRACT:
The invention provides a Schottky barrier structure comprising a Schottky gate electrode, a first layer in contact with said Schottky gate electrode and said first layer being made of a first compound semiconductor and a second layer in contact with said first layer and said second layer being made of a second compound semiconductor having a higher conduction band edge than a conduction band edge of said first compound semiconductor.

REFERENCES:
patent: 4484207 (1984-11-01), Nishizawa et al.
patent: 5038187 (1991-08-01), Zhou
patent: 5053835 (1991-10-01), Horikawa et al.
patent: 5206528 (1993-04-01), Nashimoto
patent: 5343057 (1994-08-01), Gerard et al.
U. Mishra, "The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications", IEEE, Sep. 1989, vol. 37, No. 9, pp. 1279-1285.
N. Iwata et al., "High Performance Double-Doped InAlAs/InGaAs/InP Hetrojunction Fet with Potential for Millimetre-Wave Power Applications", Electronic Letters, Apr. 1993, vol. 29, No. 7, pp. 628-629.
S. Fujita et al., "InGaAs/InAlAs HEMT with a Strained InGaP Schottky Contact Layer", IEEE Electron Device Letters, May 1993, vol. 14, No. 5, pp. 259-261.
By S. Fujita et al., "InGaAs/InAlAs HEMT with a Strained InGaP Schottky Contact Layer", IEEE Electron Device Letters, May 1993, vol. 14, No. 5, pp. 259-261.
By C. Heedt et al, "Extremely low gate leakage InAlAs/InGaAs HEMT", Inst. Phys. Conf. Serv, 1992, Chapter 12, No. 129, pp. 941 and 942.
Iwaka et al; "High Performance Double Doped InAlAs/InGaAs/InP Heterojunction FET . . . "; Electronic Letters Apr. 1993; vol. 29, No. 7; pp. 628-629.

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