Field effect transistor having a multi-layer channel

Details Field effect transistor having a multi-layer channel Field effect transistor having a multi-layer channel

1993-05-05

1995-09-26

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 29804, H01L 29812

Patent

active

054536316

ABSTRACT:
In a field effect transistor having a channel layer interposed between heterojunctions, the channel layer has an intermediate layer of undoped InGaAs interposed between first and second channel layers each of which has a composition different from the intermediate layer. The composition of each of the first and the second channel layers may be composed of either InP or InGaAs. The intermediate layer may be formed either by a single layer of InGaAs or by a plurality of intermediate films of InGaAs which have In compositions different from one another when each of the first and the second channel layers is composed of InP. A maximum one of the In compositions is assigned to a selected one of the intermediate films. Alternatively, a selected one of the intermediate films includes a maximum In composition when each of the first and the second channel layers is formed by InGaAs.

REFERENCES:
G. I. Ng et al., "Improved strained . . . Double hetero function In.sub.0.65 Ga.sub.0.35 As/In.sub.0.52 Al.sub.0.48 As Design"; IEEE Microwave and Guided Wave Letters, vol. 1, No. 5, Mar. 1989, pp. 114-116.
"Low-Temperature DC characteristics of Pseudomorphic Ga.sub.0.8 In.sub.0.82 P/InP/Ga.sub.0.47 In.sub.0.53 As HEMT"; Lovaliche et al. IEEE electron device letters, vol. 11, No. 4, Apr. 1990.
Martin et al; "Highly Stable Microwave Performance InP/InGaAs HIGFET's"; IEEE vol. 37 No. 8; Aug. 1990 pp. 1916-1917.
K. H. G. Duh et al., "A Super Low-Noise 0.1 .mu.m T-Gate InAlAs-InGaAs-InP HEMT", IEEE Microwve and Guided Wave Letters, vol. 1, No. 5, May 1991, pp. 114-116.
G. I. Ng et al., "Improved Strained . . . Double-Heterojunction In.sub.0.65 Ga.sub.0.35 As/In.sub.0.52 Al.sub.0.48 As Design", IEEE Electron Device Letters, vol. 10, No. 3, Mar. 1989, pp. 114-116.
Tatsushi Akazaki et al., "Improved InAlAs/InGaAs HEMT . . . InAs Layer into the InGaAs Channel", IEEE Electron Device Letters, vol. 13, No. 6, Jun. 1992, pp. 325-327.

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