Field effect transistor with first and second drain electrodes

Details Field effect transistor with first and second drain electrodes Field effect transistor with first and second drain electrodes

1997-09-19

2000-11-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257195, 257283, 438167, 438172, H01L 31072, H01L 31109, H01L 310328, H01L 310336

Patent

active

061473707

ABSTRACT:
To enhance a drain current voltage characteristics of a compound semiconductor field effect transistor, an n-GaAs substrate is used. After forming an n.sup.- -GaAs layer and an i-AlGaAs layer successively on the substrate, an n-type transistor is formed on these layers. Subsequently, on the rear side of the n-GaAs substrate, an ohmic electrode is formed, to connect with a drain electrode on a surface side. In the structure, when a drain current is increased, at a drain side electron also flows toward the substrate, so that the current concentration on a drain region is relaxed. Thereby, the drain current voltage characteristics can be improved.

REFERENCES:
patent: 4636823 (1987-01-01), Margalit et al.
patent: 5060030 (1991-10-01), Hoke
patent: 5140386 (1992-08-01), Huang et al.
R. Yamamoto, et al., "Light Emission and Burnout Characteristics of GaAs Power MESFET's", IEEE Transactions of Electron Devices, vol. ED-25, No. 6, Jun. 1978, pp. 567-573.
English language translation of Japanese Office Action dated Jul. 28, Hei 10.

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