Field effect transistor with independently biased gates

Details Field effect transistor with independently biased gates Field effect transistor with independently biased gates

2006-04-18

2009-12-08

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S191000, C257S194000

Reexamination Certificate

active

07629627

ABSTRACT:
A field effect transistor (FET) having at least two independently biased gates can provide uniform electric field in the channel region of the FET. The same AC voltage may be applied to each gate for modulating the FET. One of the gates is positioned closer to the channel region than the other gate. Such a FET allows tailoring the electric field in the channel region of the FET so that it is substantially uniform. The FET exhibits desirable performance characteristics, including having a constant transconductance.

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