Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1997-07-28
1999-04-20
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
259183, 259187, 259200, 259201, 257202, 257192, 257193, 257194, H01L 310328
Patent
active
058959416
ABSTRACT:
A semiconductor device includes an InP substrate; an undoped InAlAs buffer layer, an undoped InGaAs active layer, and an n type InAlAs electron supply layer successively disposed on the InP substrate; a T-shaped gate electrode on the n type electron supply layer, the T-shaped gate electrode having an upper overhanging part; n type InGaAs cap layers disposed on the n type electron supply layer at opposite sides of and spaced apart from the T-shaped gate electrode, each cap layer having a portion positioned beneath the upper overhanging part of the T-shaped gate electrode; and a source electrode and a drain electrode respectively disposed on the cap layers, each of these electrodes having a portion positioned beneath the upper overhanging part of the T-shaped gate electrode.
REFERENCES:
patent: 5139968 (1992-08-01), Hayase et al.
patent: 5270798 (1993-12-01), Pao et al.
patent: 5419808 (1995-05-01), Kitano
patent: 5468343 (1995-11-01), Kitano
patent: 5486710 (1996-01-01), Kitano
patent: 5621228 (1997-04-01), Ando
patent: 5677553 (1997-10-01), Yamamoto et al.
Abraham Fetsum
Mitsubishi Denki & Kabushiki Kaisha
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