Field effect transistor incorporating at least one structure...

Details Field effect transistor incorporating at least one structure... Field effect transistor incorporating at least one structure...

2007-06-19

2011-10-04

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S219000, C257S243000, C438S167000

Reexamination Certificate

active

08030687

ABSTRACT:
Disclosed are embodiments of a field effect transistor (FET) having decreased drive current temperature sensitivity. Specifically, any temperature-dependent carrier mobility change in the FET channel region is simultaneously counteracted by an opposite strain-dependent carrier mobility change to ensure that drive current remains approximately constant or at least within a predetermined range in response to temperature variations. This opposite strain-dependent carrier mobility change is provided by a straining structure that is configured to impart a temperature-dependent amount of a pre-selected strain type on the channel region. Also disclosed are embodiments of an associated method of forming the field effect transistor.

REFERENCES:
patent: 5294360 (1994-03-01), Carlson et al.
patent: 7060549 (2006-06-01), Craig et al.
patent: 7400031 (2008-07-01), Anderson et al.
patent: 2006/0237785 (2006-10-01), Ieong et al.
patent: 2006/0249794 (2006-11-01), Teh et al.
patent: 2006/0252194 (2006-11-01), Lim et al.
patent: 2008/0265241 (2008-10-01), Foerster
patent: 2010/0135937 (2010-06-01), O'Brien et al.

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