Field effect transistor semiconductor device

Details Field effect transistor semiconductor device Field effect transistor semiconductor device

2006-07-18

2006-07-18

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S012000, C257S020000, C257SE21395, C257SE21399

Reexamination Certificate

active

07078743

ABSTRACT:
A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1-yN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

REFERENCES:
patent: 5225707 (1993-07-01), Komaru et al.
patent: 5362678 (1994-11-01), Komaru et al.
patent: 5917209 (1999-06-01), Andoh
patent: 6476431 (2002-11-01), Ohno et al.
patent: 2001/0023964 (2001-09-01), Wu et al.
patent: 2002/0017696 (2002-02-01), Nakayama et al.
patent: 2003/0020092 (2003-01-01), Parikh et al.
patent: 2003/0213975 (2003-11-01), Hirose et al.
patent: 5-21474 (1993-01-01), None
patent: 11-45892 (1999-02-01), None
patent: 2002-270822 (2002-09-01), None
patent: 2002-536847 (2002-10-01), None
patent: WO 00/48248 (2000-08-01), None
Masumi Fukuda et al.; “Basis for GaAs Field Effect Transistor”;The Institute of Electronics, Information and Engineers;c. 1992; p. 214-217.
Yuji Ando et al.; “Characterization of High Breakdown Voltage AlGaN/GaN Heterojunction FETs with a Field Plate Gate”;Photonic abd Wireless Devices Research Laboratories;c. 2002; pp. 29-34.

Affiliated with

Also associated with

Rating

Field effect transistor semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3568938