Field effect transistor including a group III-V compound...

Details Field effect transistor including a group III-V compound... Field effect transistor including a group III-V compound...

2006-03-24

2008-03-04

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S024000, C257S027000, C257S189000, C257S194000, C257S195000

Reexamination Certificate

active

07339206

ABSTRACT:
A field effect transistor (FET) includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band gap energy greater than that of the first semiconductor layer. The first and second semiconductor layers are made of a Group III-V compound semiconductor layer, formed on the first semiconductor layer are a gate electrode36and a source electrode35, formed on the second semiconductor layer is a drain electrode37, and the drain electrode and the gate electrode are formed respectively on opposing planes of a semiconductor structure which contains the first and second semiconductor layers. This arrangement enables a drain's breakdown voltage to be increased in the FET, because the gate electrode36and the drain electrode37are respectively disposed, in a spatial separation of each other, on different planes instead of the same plane of the semiconductor structure.

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