Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1994-01-12
1995-12-05
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257195, 257201, H01L 29161, H01L 29205, H01L 29225
Patent
active
054731771
ABSTRACT:
There is disclosed a field effect transistor having a channel layer, an electron supply layer, and a spacer layer formed between the channel layer and the electron supply layer. The spacer layer has a thickness for spatially separating a two-dimensional electron gas from donor ions in the electron supply layer, and for forming the two-dimensional electron gas in the channel layer by the Coulomb force of the donor ions. The spacer layer material has better high frequency characteristics than that of the electron supply layer.
REFERENCES:
patent: 5105241 (1992-04-01), Ando
patent: 5107319 (1992-04-01), Lauterbach et al.
Temkin et al., "Insulating Gate InGaAs/InP FET", Applied Physics Letters, vol. 53, No. 25, Dec. 19, 1988, New York, U.S.
Pao et al., "Impact of Surface Layer on InAlAs/InGaAs/InP High Electron Mobility Transistors," IEEE Electron Device Letters, vol. 11, No. 7, Jul. 1990, New York, U.S.A.
Patent Abstracts of Japan, vol. 13, No. 468 (E-834)(3816) 23 Oct. 1989 & JP-A-1 183 859 (Sumitomo) 21 Jul. 1989.
Hille Rolf
Sumitomo Electric Industries Ltd.
Wallace Valencia M.
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