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DRAM constructions and electronic systems

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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DRAM constructions, memory arrays and semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cylindrical capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM device having a gate dielectric layer with multiple...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM device having a memory cell array of a divided bit line typ

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM device with cell epitaxial layers partially overlap...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Dram device with improved memory cell reliability

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM devices having an increased density layout

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM having a buried region contacted through a field region

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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DRAM having a cup-shaped storage node electrode recessed within

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM having a cup-shaped storage node electrode recessed...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM having a guard ring and process of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM having a large dielectric breakdown voltage between an adja

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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DRAM having a stacked capacitor and a method for fabricating...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM having at least three layered impurity regions between...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Dram having deeper source drain region than that of an logic...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM having peripheral circuitry in which source-drain interconn

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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DRAM having peripheral circuitry in which source-drain interconn

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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DRAM having peripheral circuitry in which source-drain interconn

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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