Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-16
2000-04-18
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257295, 257309, H01L 27108
Patent
active
060518596
ABSTRACT:
Provided is a semiconductor device and a method of manufacturing the semiconductor device having a stacked type capacitor excellent in storage capacity, breakdown voltage and reliability. A storage node electrode (Ru) of the stacked-type capacitor is formed on a contact hole of the underlying insulating film by the steps of forming the side wall of the contact hole diagonally at a taper angle within the range of 90 to 110.degree., forming a storage node electrode on the inner wall surface of the contact hole, filling SOG in the contact hole, etching off the Ru film on the insulating film using SOG as a mask, and etching off the Ru film formed on the upper peripheral region of the inner wall in the depth direction of the contact hole. Thereafter, the dielectric film of the stacked-type capacitor formed of a (Ba, Sr) TiO.sub.3 thin film is formed on the Ru storage node electrode. In this manner, it is possible to obtain a stack-type capacitor having a drastically-improved step coverage and a high breakdown voltage. In addition, it is easy to reduce the distance between adjacent Ru storage node electrodes within a resolution limit of lithography, compared to the conventional method.
REFERENCES:
patent: 4094057 (1978-06-01), Bhattacharyya et al.
patent: 5101251 (1992-03-01), Wakamiya et al.
patent: 5150276 (1992-09-01), Gonzalez et al.
patent: 5323038 (1994-06-01), Gonzalez et al.
patent: 5381365 (1995-01-01), Ajika et al.
patent: 5436477 (1995-07-01), Hashizume et al.
patent: 5444013 (1995-08-01), Akram et al.
patent: 5466964 (1995-11-01), Sakao et al.
patent: 5555520 (1996-09-01), Sudo et al.
patent: 5563085 (1996-10-01), Kohyama
patent: 5644151 (1997-07-01), Izumi et al.
patent: 5668041 (1997-09-01), Okudaira et al.
patent: 5691219 (1997-11-01), Kawakubo et al.
patent: 5698878 (1997-12-01), Miyashita et al.
patent: 5728596 (1998-03-01), Prall
patent: 5801079 (1998-09-01), Takaishi
Nishioka et al., "Giga-bit Scale DRAM Cell with New Simple Ru/(Ba,Sr) TiO3/RU Stacked Capacitors Using x-ray Lithography", IEDM 95, pp. 903-906.
Hosotani Keiji
Kohyama Yusuke
Baumeister Bradley William
Jackson, Jr. Jerome
Kabushiki Kaisha Toshiba
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