Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-28
2006-11-28
Lee, Calvin (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S255000, C438S398000
Reexamination Certificate
active
07141847
ABSTRACT:
The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
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Gealy F. Daniel
Graettinger Thomas M.
Srividya Cancheepuram V.
Lee Calvin
Micro)n Technology, Inc.
Wells St. John P.S.
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