DRAM device with cell epitaxial layers partially overlap...

Details DRAM device with cell epitaxial layers partially overlap... DRAM device with cell epitaxial layers partially overlap...

2007-02-12

2010-06-01

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S331000, C257SE27084, C257SE27086

Reexamination Certificate

active

07728373

ABSTRACT:
A semiconductor device may include a substrate having a cell active region. A cell gate electrode may be formed in the cell active region. A cell gate capping layer may be formed on the cell gate electrode. At least two cell epitaxial layers may be formed on the cell active region. One of the at least two cell epitaxial layers may extend to one end of the cell gate capping layer and another one of the at least two cell epitaxial layers may extend to an opposite end of the cell gate capping layer. Cell impurity regions may be disposed in the cell active region. The cell impurity regions may correspond to a respective one of the at least two cell epitaxial layers.

REFERENCES:
patent: 5270257 (1993-12-01), Shin
patent: 6498071 (2002-12-01), Hijzen
patent: 6638826 (2003-10-01), Zeng
patent: 6770535 (2004-08-01), Yamada et al.
patent: 2004/0043595 (2004-03-01), Lee et al.
patent: 2004/0169221 (2004-09-01), Ko et al.
patent: 1020010093012 (2001-10-01), None

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