DRAM device having a gate dielectric layer with multiple...

Details DRAM device having a gate dielectric layer with multiple... DRAM device having a gate dielectric layer with multiple...

2011-05-24

2011-05-24

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29260, C257S396000, C257S288000, C257S331000, C257S332000, C257S520000, C257S559000

Reexamination Certificate

active

07948028

ABSTRACT:
A transistor device employed in a support circuit of a DRAM includes a semiconductor substrate having thereon a gate trench, a recessed gate embedded in the gate trench, a source doping region disposed at one side of the recessed gate, a drain doping region disposed at the other side of the recessed gate, and a gate dielectric layer between the recessed gate and the semiconductor substrate. The gate dielectric layer has at least two thicknesses that render the high-voltage transistor device asymmetric. The thicker gate dielectric layer is between the recessed gate and the drain doping region, while the thinner gate dielectric layer is between the recessed gate and the source doping region.

REFERENCES:
patent: 5640034 (1997-06-01), Malhi
patent: 6359308 (2002-03-01), Hijzen et al.
patent: 2004/0224476 (2004-11-01), Yamada
patent: 2004/0248364 (2004-12-01), Hsiao
patent: 2005/0275014 (2005-12-01), Kim et al.
patent: 2006/0163631 (2006-07-01), Chen et al.
patent: 2007/0052013 (2007-03-01), Kim et al.
patent: 2007/0075351 (2007-04-01), Schulz et al.
patent: 2007/0132016 (2007-06-01), Elwin
patent: 2007/0148876 (2007-06-01), Yu
patent: 2009/0014813 (2009-01-01), Chao et al.
patent: 103 59 493 (2005-02-01), None
patent: 10 2006 034 772 (2007-07-01), None

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