Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-22
2011-03-22
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S384000, C257S390000, C257SE27084, C257SE27102, C257SE21646, C257SE21660, C257SE21662, C257SE21678, C257SE21683, C257SE21691, C257SE27108, C257S069000, C257S296000, C257S297000, C257S369000, C257S371000, C257S374000, C438S306000
Reexamination Certificate
active
07911005
ABSTRACT:
A semiconductor device having a DRAM region and a logic region embedded together therein, including a first transistor formed in a DRAM region, and having a first source/drain region containing arsenic and phosphorus as impurities; and a second transistor formed in a logic region, and having a second source/drain region containing at least arsenic as an impurity, wherein each of the first source/drain region and the second source/drain region has a silicide layer respectively formed in the surficial portion thereof, and the first source/drain region has a junction depth which is determined by phosphorus and is deeper than the junction depth of the second source/drain region.
REFERENCES:
patent: 6004842 (1999-12-01), Ikemasu et al.
patent: 2001-127270 (2001-05-01), None
patent: 2005-116582 (2005-04-01), None
Lopez Fei Fei Yeung
McGinn IP Law Group PLLC
Renesas Electronics Corporation
Tran Minh-Loan T
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