DRAM having a buried region contacted through a field region

Details DRAM having a buried region contacted through a field region DRAM having a buried region contacted through a field region

1995-09-06

1997-09-02

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257382, 257647, H01L 2978, H01L 2350

Patent

active

056635850

ABSTRACT:
A semiconductor memory cell has a semiconductor substrate, an active region disposed on the semiconductor substrate and having two impurity regions, a gate electrode disposed on the active region, a field region isolated from the active region on the semiconductor substrate and having a contract hole, a capacitor disposed over the active region and field region on the semiconductor substrate, and a buried region disposed under the field region and the bit line contacting the first impurity region through the contact hole.

REFERENCES:
patent: 4961095 (1990-10-01), Mashiko
patent: 5012309 (1991-04-01), Nakayama
patent: 5014103 (1991-05-01), Ema
patent: 5172202 (1992-12-01), Kazuo

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