DRAM cylindrical capacitor

Details DRAM cylindrical capacitor DRAM cylindrical capacitor

2008-10-08

2010-12-14

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S534000, C257SE27086

Reexamination Certificate

active

07851843

ABSTRACT:
A structure of a DRAM cylindrical capacitor includes a substrate, a dielectric layer, an amorphous silicon spacer, a polysilicon plug, a HSG layer, a conductive layer and a capacitor dielectric layer. The dielectric layer is disposed on the substrate and includes an opening. The amorphous silicon spacer is disposed on the sidewall of the opening, wherein the polysilicon plug is exposed by the opening. The polysilicon plug includes a notch, and the internal surface of the notch is at the same plane as the internal surface of the amorphous silicon spacer. The HSG layer is disposed on the surface of the amorphous silicon spacer. Furthermore, the conductive layer is disposed on the HSG layer and the capacitor dielectric layer is disposed between the HSG layer and the conductive layer.

REFERENCES:
patent: 6174770 (2001-01-01), Chi
patent: 6300192 (2001-10-01), Kim
patent: 6358795 (2002-03-01), Tseng
patent: 6677217 (2004-01-01), Joo et al.
patent: 6867096 (2005-03-01), Cho et al.
patent: 2002/0024080 (2002-02-01), Derderian et al.
patent: 2005/0042823 (2005-02-01), Chen et al.
patent: 2006/0014385 (2006-01-01), Kim et al.

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