LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Strain compensated semiconductor structures and methods of...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Strontium doping of molten silicon for use in crystal...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Sublimation and purification method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Sublimation growth of single crystal SiC

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Substituted donor atoms in silicon crystal for quantum computer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Substrate for epitaxy and method of preparing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Substrate having a zinc oxide nanowire array normal to its...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Substrate including wide low-defect region for use in...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

Substrate processing apparatus and substrate processing method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Substrate processing method and apparatus and SOI substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Substrate with a compound semiconductor surface layer and method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Substrate, semiconductor device, element-mounted device and prep

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Substrates and methods for gas phase deposition of semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Superabrasive particle synthesis with controlled placement...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Superabrasive particle synthesis with controlled placement...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Superconductor incorporating therein superconductivity...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Supplemental heating unit for crystal growth furnace

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Supporting apparatus for supporting a growing single crystal...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Surface acoustic wave device, substrate therefor, and method...