Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1994-03-15
1995-08-15
Wilczewski, Mary
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117105, 117951, 437100, 148DIG148, C30B 2300, H01L 2120
Patent
active
054410118
ABSTRACT:
A method of growing a first SiC single crystal on a seed crystal including a second SiC single crystal, comprises the steps of setting a SiC source material at an initial temperature, growing the first SiC single crystal on the seed crystal including the second SiC single crystal at a temperature lower than the initial temperature of the source material and gradually decreasing the source material temperature from the initial temperature during at least a predetermined period during the growing step.
REFERENCES:
patent: 2854364 (1958-09-01), Lely
patent: 3147159 (1964-09-01), Lowe
patent: 3236780 (1966-02-01), Ozarow
patent: 3343920 (1967-09-01), Lowe
patent: 3615930 (1971-10-01), Knippenber et al.
patent: 4147572 (1979-04-01), Vodakov et al.
patent: 4866005 (1989-09-01), Davis et al.
patent: 5211801 (1993-05-01), Stein
Kanaya Masatoshi
Takahaski Jun
Nippon Steel Corporation
Wilczewski Mary
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