Sublimation growth of single crystal SiC

Details Sublimation growth of single crystal SiC Sublimation growth of single crystal SiC

1994-03-15

1995-08-15

Wilczewski, Mary

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117105, 117951, 437100, 148DIG148, C30B 2300, H01L 2120

Patent

active

054410118

ABSTRACT:
A method of growing a first SiC single crystal on a seed crystal including a second SiC single crystal, comprises the steps of setting a SiC source material at an initial temperature, growing the first SiC single crystal on the seed crystal including the second SiC single crystal at a temperature lower than the initial temperature of the source material and gradually decreasing the source material temperature from the initial temperature during at least a predetermined period during the growing step.

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patent: 4147572 (1979-04-01), Vodakov et al.
patent: 4866005 (1989-09-01), Davis et al.
patent: 5211801 (1993-05-01), Stein

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