Supporting apparatus for supporting a growing single crystal...

Details Supporting apparatus for supporting a growing single crystal... Supporting apparatus for supporting a growing single crystal...

2006-08-24

2010-10-19

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

C117S011000, C117S013000, C117S200000, C117S206000, C117S902000, C117S911000

Reexamination Certificate

active

07815736

ABSTRACT:
An apparatus for supporting a single crystal during Czochralski crystal pulling below a thickened crystal neck has lower bearing surface(s) with a central opening inscribable with a horizontal circle of diameter D1, centered on a vertical axis, the bearing surface(s) connected by connecting element(s) to minimally one securing element for securing to a crystal pulling lifting device, the connecting elements arranged to provide a clear-space in the region above the bearing surface(s) in which a circle of diameter D2centered on the vertical axis (D2>D1) is inscribable over a length of the vertical axis. The unitary apparatus is useful for crystal ingot growth by immersion into the semiconductor melt prior to growth of a Dash neck and a thickening of the Dash neck. The apparatus is then raised to support the crystal by bearing against the bottom of the thickening.

REFERENCES:
patent: 3857679 (1974-12-01), Allred
patent: 5879448 (1999-03-01), Urano et al.
patent: 6015461 (2000-01-01), Izumi
patent: 6077347 (2000-06-01), Ohtsukasa et al.
patent: 0867534 (1998-09-01), None
patent: 0869202 (1998-10-01), None
patent: 10-273387 (1998-10-01), None

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