Substrate, semiconductor device, element-mounted device and prep

Details Substrate, semiconductor device, element-mounted device and prep Substrate, semiconductor device, element-mounted device and prep

1995-11-30

1998-07-28

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 94, 117 95, 117929, C30B 2905

Patent

active

057857547

ABSTRACT:
A substrate, which has a high thermal conductivity material layer having a thermal conductivity of at least 10 W/cm.multidot.K and which has a cooling medium flow path on or in the high thermal conductivity material layer, has a high heat-dissipating property.

REFERENCES:
Ramsham et al, "Fabrication of Microchannels in Synthetic Polycrystalline Diamond Thin Films for Heat Sinking Applications", Journal of the Electrochemical Society, vol. 138, No. 6, Jun. 1991, pp. 1706-1709.
Fiegl et al., "Diamond Films as Thermal Conductors and Electrical Insulators Applied to Semiconductor Power Modules", Diamond and Related Materials, vol. 3, Nos. 4/6, Apr. 1994, pp. 658-662.

Affiliated with

Also associated with

Rating

Substrate, semiconductor device, element-mounted device and prep does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substrate, semiconductor device, element-mounted device and prep, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate, semiconductor device, element-mounted device and prep will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-19538