Substrates and methods for gas phase deposition of semiconductor

Details Substrates and methods for gas phase deposition of semiconductor Substrates and methods for gas phase deposition of semiconductor

1994-11-29

1995-10-31

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

117 86, 117106, 117108, C30B 2304

Patent

active

054620120

ABSTRACT:
A novel substrate for growth of material by chemical phase deposition includes a temperature monitoring zone formed by applying a coating of growth preventing material (e.g., SiO.sub.x or SiN.sub.x) to a portion of the substrate. The temperature of the substrate can be monitored during growth of a desired material using an optical pyrometer having its field of view directed at the temperature monitoring zone.

REFERENCES:
patent: 5009926 (1991-04-01), Fukuda
patent: 5213985 (1993-05-01), Sandroff et al.
patent: 5318801 (1994-06-01), Snail et al.
patent: 5387309 (1995-02-01), Bobel et al.
Epitaxial growth rate measurements during molecular beam epitaxy A. J. Spring Thorpe, et al., J. Vac. Sci. Technol. B 8 (2), Mar./Apr. 1990, pp. 266-270.
Chemical Beam Epitaxy of Ga.sub.0.47 In.sub.0.53 As/InP Quantum Wells and Heterostructure Devices, W. T. Tsang, Journal of Crystal Growth 81 (1987), pp. 261-269.

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