Statement of government interest

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

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Details

117 77, 117 81, 117 82, 117 83, 117935, C30B 1102

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active

056560796

ABSTRACT:
The present invention is an apparatus for the synthesis and growth of single crystals of phosphorus compounds starting with the elemental materials in a single furnace without external exposure. The apparatus of the present invention is a crystal growth furnace heated by RF coils. Inside the furnace is a susceptor heated by a lower coil device for holding a crucible. Above the crucible is selectively positioned a phosphorus improved injector. The improved injector is further surrounded by a susceptor which is heated by an upper coil device. The non-phosphorus materials are placed in the crucible and melted to a desired temperature. The phosphorus material previously placed within the injector is heated by the radiant heat from both crucible and the upper susceptor to drive the phosphorus vapor into the melt through a tube. This is closely controlled by noting the temperature within the injector and adjusting the height of the injector above the melt to control the temperature within the phosphorus material. After the formation of the stoichiometric melt, the seed is inserted into the melt for crystal growth if so desired. A further improvement to the above apparatus is the use of an improved injector having a cover and a shield thereabout. The injector and cover have a central hole through which the seed is inserted. The injector is moved vertically within the cover to provide the proper temperature therein.

REFERENCES:
patent: 3853487 (1974-12-01), Meuleman et al.
patent: 4055457 (1977-10-01), Swinehart
patent: 4190486 (1980-02-01), Kyle
patent: 4904336 (1990-02-01), Ozawa et al.
patent: 5135726 (1992-08-01), Min et al.
patent: 5438953 (1995-08-01), Aoki et al.

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