Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2005-01-11
2005-01-11
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S089000, C117S094000, C117S098000, C117S105000
Reexamination Certificate
active
06841001
ABSTRACT:
Semiconductor structure and method of fabricating a semiconductor structure are provided that include a substrate having a first in-plane unstrained lattice constant, a first layer comprising a first semiconductor material on the substrate and having a second in-plane unstrained lattice constant that is different from the first in-plane unstrained lattice constant and a variable mismatch layer comprising a second semiconductor material disposed between the substrate and the first layer. The variable mismatch layer is configured to reduce stress in the first layer to below a level of stress resulting from growth of the first layer directly on the substrate. The variable mismatch layer may be a layer having a strained in-plane lattice constant that substantially matches the unstrained lattice constant of the first layer.
REFERENCES:
patent: 5192987 (1993-03-01), Khan et al.
patent: 5296395 (1994-03-01), Khan et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5592501 (1997-01-01), Edmond et al.
patent: 5838706 (1998-11-01), Edmond et al.
patent: 5874747 (1999-02-01), Redwing et al.
patent: 5877519 (1999-03-01), Jewell
patent: 6046464 (2000-04-01), Schetzina
patent: 6064082 (2000-05-01), Kawai et al.
patent: 6072189 (2000-06-01), Duggan
patent: 6121121 (2000-09-01), Koide
patent: 6165874 (2000-12-01), Powell et al.
patent: 6177685 (2001-01-01), Teraguchi et al.
patent: 6194241 (2001-02-01), Tsutsui et al.
patent: 6194742 (2001-02-01), Kern et al.
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6429467 (2002-08-01), Ando
patent: 6515316 (2003-02-01), Wojtowicz
patent: 20010015446 (2001-08-01), Inoue et al.
patent: 20010020700 (2001-09-01), Inoue et al.
patent: 20010023964 (2001-09-01), Wu et al.
patent: 20020020341 (2002-02-01), MArchand et al.
patent: 20030102482 (2003-06-01), Saxler
patent: WO 0213245 (2002-02-01), None
patent: WO 0248434 (2002-06-01), None
patent: WO 03049193 (2003-06-01), None
Kim et al., “Effects of step-graded AIGa N interlayer on properties of GaN grown on Si using ultrhigh vacuum chemical vapor deposition”, Applied Physics Letters vol. 79, No. 17 Oct. 22, 2001 pp. 2713-2715.*
Marchand et al. “Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors,”Journal of Applied Physicsvol. 89, No. 12, Jun. 15, 2001, pp. 7846-7851.
Waldrip et al. “Stress engineering during metalorganic chemical vapor deposition of AiGaN/GaN distributed Bragg reflectors,”Applied Physics Letters,vol. 78, No. 21, May 21, 2001, pp. 3205-3207.
Etzkorn et al. “Cracking of GaN films,”Journal of Applied Physics,vol. 89, No. 2, Jan. 15, 2001, pp. 1025-1034.
Sullivan et al. “High-Power 10-Ghz Operation of AlGaN HFET's on Insulating SiC,”IEEE Electron Device Letters,vol. 19, No. 6, Jun. 1998, pp. 198-200.
Sheppard et al. “Improved 10-Ghz Operation of GaN/AlGaN HEMTs on Silicon Carbide,”Materials Science Forum,vols. 338-42 (2000), pp. 1645-1646, No month.
Wu et al. “High Al-Content AlGaN/GaN MODFET's for Ultrahigh Performance,”IEEE Electron Device Letters,vol. 19, No. 2, Feb. 1998.
Yu et al. “Schottky barrier engineering in III-V nitrides via the piezoelectric effect,”Applied Physics Letters,vol. 73, No. 13, Sep. 28, 1998, pp. 1880-1882.
International Search Report dated Nov. 17, 2003 for PCT/US03/10788.
Bharatan et al. “Structural characterization of GaN and GaAsxN1-xgrown by electron cyclotron resonance-metalorganic molecular beam epitaxy,”J. Vac. Sci. Technol. Avol. 12, No. 4, Jul. 1994.
Kim et al. “Effects of step-graded A1xGa1-xN interlayer on properties of GaN grown on Si(111) using ultrahight vacuum chemical vapor deposition,”Applied Physics Letters, vol. 79, No. 17, Oct. 22, 2001.
Marchand et al. “Metalorganic Chemical Vapor Deposition of GaN on SI(111): Stress Control and Application to Field-Effect Transistors,”Journal of Applied Physics, vol. 89, No. 12, Jun. 15, 2001.
Molina et al. “Strain relief in linearly graded composition buffer layers: a design scheme to grow dislocation-free (<105cm−2) and unstrained epilayers,”Applied Physics Lettersvol. 65, No. 19, Nov. 7, 1994.
Tan et al “N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD,”Solid State Electronics, vol. 45 (2001) pp. 1945-1949.
Cree Inc.
Kunemund Robert
Myers Bigel Sibley & Sajovec P.A.
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