Substrate for epitaxy and method of preparing the same

Details Substrate for epitaxy and method of preparing the same Substrate for epitaxy and method of preparing the same

2008-06-17

2008-06-17

Davis, Robert B. (Department: 1791)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S009000, C117S011000, C117S068000, C117S077000, C117S084000, C117S107000, C117S952000

Reexamination Certificate

active

07387677

ABSTRACT:
The substrate is used for opto-electric or electrical devices and comprises a layer of nitride grown by means of vapor phase epitaxy growth wherein both main surfaces of the nitride substrate are substantially consisting of non N-polar face and N-polar face respectively and the dislocation density of the substrate is 5×105/cm2or less. Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.

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Liu, L. et al., “Substrate for Gallium Nitride Epitaxy”, Materials Science and Engineering, 2002, pp. 61-127, R 37, No. 3, Elsevier Science B.V.

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