Substituted donor atoms in silicon crystal for quantum computer

Details Substituted donor atoms in silicon crystal for quantum computer Substituted donor atoms in silicon crystal for quantum computer

2006-08-29

2006-08-29

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S084000, C117S095000, C117S096000, C117S104000

Reexamination Certificate

active

07097708

ABSTRACT:
This invention concerns nanoscale products, such as electronic devices fabricated to nanometer accuracy. It also concerns atomic scale products. These products may have an array of electrically active dopant atoms in a silicon surface, or an encapsulated layer of electrically active donor atoms. In a further aspect the invention concerns a method of fabricating such products. The methods include forming a preselected array of donor atoms incorporated into silicon. Encapsulation by growing silicon over a doped surface, after desorbing the passivating hydrogen. Also, using an STM to view donor atoms on the silicon surface during fabrication of a nanoscale device, and measuring the electrical activity of the donor atoms during fabrication of a nanoscale device. Such products and processes are useful in the fabrication of a quantum computer, but could have many other uses.

REFERENCES:
patent: 6472681 (2002-10-01), Kane
patent: 2001-053014 (2002-05-01), None
O'Brien et al , Towards the fabriaction of phosphorus qubits for a silicon quantum computer, arXiv:cond-mat/0104569 vol. 1 Apr. 30, 2001 pp. 1-5.
Shen, T.-C. et al.. Al Nucleation on monohydride and bare SI(001) surfaces: atomic scale patterning. Physical Review Letters. vol. 78. No. 7. p. 1271-74, Issued Feb. 17, 1997.

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