Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2008-07-29
2008-07-29
Kunemund, Robert (Department: 1791)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S929000, C423S446000, C051S293000
Reexamination Certificate
active
07404857
ABSTRACT:
An improved method for synthesizing superabrasive particles provides high quality industrial superabrasive particles with high yield and a narrow size distribution. The synthesis method includes forming a substantially homogeneous mixture of raw material and catalyst material or layers of raw material and metal catalyst. A plurality of crystalline seeds is placed in a predetermined pattern in the mixture or one of the layers to form a growth precursor. The growth precursor is maintained at a temperature and pressure at which the superabrasive crystal is thermodynamically stable for a time sufficient for a desired degree of growth. Advantageously, the patterned placement of crystalline seeds and disclosed processes allow for production of various morphologies of synthetic diamonds, including octahedral and cubic diamonds, and improved growth conditions generally. As a result, the grown superabrasive particles typically have a high yield of high quality particles and a narrow distribution of particle sizes.
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U.S. Appl. No. 11/175,017, Sung, Chien-Min, Jul. 5, 2005.
Sung, James C., “The Eastern Wind of Diamond Synthesis,” New Diamond and Frontier Carbon Technology, vol. 13 No. 12003.
Chaet Marissa W.
Kunemund Robert
Thorpe North & Western LLP
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