Search
Selected: M

Method of producing silicon carbide single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing silicon monocrystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing silicon monocrystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing silicon single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing silicon single crystal thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing silicon wafer and silicon wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing silicon-carbide single crystals by sublimati

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing silicon-germanium-on-insulator material...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing silison single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing single crystal and apparatus therefor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing single crystal of KTiOPO.sub.4

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing single crystal thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing single crystal thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing single crystals and a seed crystal used in t

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing single-crystal silicon carbide

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing single-polarized lithium tantalate...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing single-polarized lithium tantalate...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of production of single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0
  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.