Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1993-05-05
1994-12-06
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 13, 117937, 423306, 423593, 423616, C30B 912
Patent
active
053700767
ABSTRACT:
A method of growing a single crystal of KTiOPO.sub.4 which is a nonlinear optical material is disclosed. Growth of the single crystal of KTiOPO.sub.4 is carried out by melting a KTiOPO.sub.4 material with a flux to produce a melt, then contacting a seed crystal to the melt, and by slowly cooling at a saturation temperature or below. At this time, molar fractions of K.sub.2 O, P.sub.2 O.sub.5 and TiO.sub.2 contained in the melt fall within a region surrounded by six point in a K.sub.2 O-P.sub.2 O.sub.5 -TiO.sub.2 ternary phase diagram of A (K.sub.2 O:0.4150, P.sub.2 O.sub.5 :0.3906, TiO.sub.2 : 0.1944), B (K.sub.2 O:0.3750, P.sub.2 O.sub.5 : 0.3565, TiO.sub.2 : 0.2685), C (K.sub.2 O: 0.3750, P.sub.2 O.sub.5 : 0.3438, TiO.sub.2 : 0.2813), D (K.sub.2 O: 0.3850, P.sub.2 O.sub.5 : 0.3260, TiO.sub.2 : 0.2890), E (K.sub.2 O: 0.4000, P.sub.2 O.sub.5 : 0.3344, TiO.sub.2 : 0.2656), and F (K.sub.2 O: 0.4158, P.sub.2 O.sub.5 : 0.3744, TiO.sub.2 : 0.2098). In addition, K.sub.15 P.sub.13 O.sub.40 or the same composition produced by melting is used as the flux, and the proportion of a KTiOPO.sub.4 element in a composition of the melt is prescribed to 83.5 to 90.0 mol %. The seed crystal is set so that a C axis is in a direction perpendicular to a melt surface. Then, the seed crystal contacted to the melt is rotated and slowly cooled. Thus, a single crystal of KTiOPO.sub.4 of single domain at the end of growth can be produced.
REFERENCES:
patent: 4305778 (1981-12-01), Gier
patent: 4724038 (1988-02-01), Pastor et al.
patent: 4746396 (1988-05-01), Marnier
patent: 4761202 (1988-08-01), Bordui et al.
patent: 4961819 (1990-10-01), Marnier
patent: 5066356 (1991-11-01), Ferretti et al.
patent: 5084206 (1992-01-01), Ballman et al.
patent: 5264073 (1993-11-01), Cheng
"X-ray topography study of flux grown KTP crystals"; Halfpenny, et al; Journal of Crystal Growth (113) 1991 pp. 722-725.
"Solubility and Crystal Growth of KiTuOPO.sub.4 In Polyphosphate Solvents", Loiacono et al; Journal of Crystal Growth 104 (1990) pp. 389-391.
Fukui Tatsuo
Kubota Shigeo
Minoya Yasushi
Okamoto Tsutomu
Tatsuki Koichi
Breneman R. Bruce
Garret Felisa
Sony Corporation
LandOfFree
Method of producing single crystal of KTiOPO.sub.4 does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing single crystal of KTiOPO.sub.4, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing single crystal of KTiOPO.sub.4 will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-207520